1SV268 PDF预览

1SV268

更新时间: 2025-07-31 22:37:47
品牌 Logo 应用领域
三洋 - SANYO 二极管开关
页数 文件大小 规格书
3页 73K
描述
Transmitting, Receiving Antenna-switch Use PIN Diode

1SV268 技术参数

生命周期:Obsolete包装说明:R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.83Is Samacsys:N
应用:SWITCHING最小击穿电压:50 V
外壳连接:CATHODE配置:SINGLE
最大二极管电容:1 pF标称二极管电容:0.7 pF
二极管元件材料:SILICON最大二极管正向电阻:0.7 Ω
二极管类型:PIN DIODEJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:1 W
认证状态:Not Qualified子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:FLAT端子位置:SINGLE
Base Number Matches:1

1SV268 数据手册

 浏览型号1SV268的Datasheet PDF文件第2页浏览型号1SV268的Datasheet PDF文件第3页 
Ordering number :EN4923  
1SV268  
Silicon Epitaxial Type  
Transmitting, Receiving  
Antenna-switch Use PIN Diode  
Features  
Package Dimensions  
unit:mm  
· Small interterminal capacitance (C=0.7pF typ).  
· Small forward series resistance (rs=0.5typ).  
1163A  
[1SV268]  
1:Anode  
2:Cathode  
3:No Contact  
SANYO:PCP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Reverse Voltage  
Forward Current  
V
R
50  
100  
1.0  
I
mA  
W
F
Mounted on ceramic board (250mm2×0.8mm)  
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
Tj  
125  
˚C  
˚C  
Tstg  
–55 to +125  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
50  
max  
Reverse Voltage  
Reverse Current  
Forward Voltage  
V
I
I
=10µA  
=45V  
R
V
µA  
V
R
R
V
0.5  
R
V
I =100mA  
0.87  
1.0  
1.0  
0.7  
F
F
Interterminal Capacitance  
Series Resistance  
C
V
=40V, f=1MHz  
0.7  
0.5  
pF  
R
rs  
I =50mA, f=470MHz  
F
Mounted on ceramic board 250mm2×0.8mm  
Thermal Resistance  
Rthj-a  
120  
˚C/W  
· Marking:VD  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/93094MO (KOTO) BX-1503 No.4923-1/3  

与1SV268相关器件

型号 品牌 获取价格 描述 数据表
1SV269 TOSHIBA

获取价格

VARIABLE CAPACITANCE DIODE (CATV TUNING)
1SV269 KEXIN

获取价格

Silicon Epitaxial Planar Diode
1SV269 TYSEMI

获取价格

High Capacitance Ratio:C2V/C25V = 11.5(Typ.) Low Series Resistance:rs = 0.55 (Typ.)
1SV269(TPH3) TOSHIBA

获取价格

VARACTOR DIODE,SINGLE,2.75PF C(T),UMD2
1SV269(TPH3,F) TOSHIBA

获取价格

DIODE VAR CATV TUNER 34V 1-1E1A
1SV269_07 TOSHIBA

获取价格

CATV Tuning
1SV270 TOSHIBA

获取价格

VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
1SV270 KEXIN

获取价格

Silicon Epitaxial Planar Diode
1SV270 TYSEMI

获取价格

High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 (Typ.)
1SV270TPH3F TOSHIBA

获取价格

VCO for UHF Band Radio