Datasheet > 1SV269

1SV269

更新时间： 2024-11-12 07:23:47

品牌	Logo	应用领域
科信 - KEXIN		二极管测试光电二极管
页数	文件大小	规格书
1页	34K
描述
Silicon Epitaxial Planar Diode

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中文翻译

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数据手册

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1SV269 数据手册

SMD Type

Diodes

Silicon Epitaxial Planar Diode

1SV269

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

+0.1

2.6

-0.1

High Capacitance Ratio:C2V/C25V = 11.5(Typ.)

Low Series Resistance:rs = 0.55 (Typ.)

1.0max

0.475

0.375

Excellent C-V Characteristics,and Small Tracking Error.

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Value

Unit

Peak Reverse Voltage

Junction Temperature

Storage Temperature Range

V^RM

T^j

36(RL = 10 K

125

)

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Conditions

Min

Typ

Max

Unit

IR = 1

Reverse Current

Capacitance

VR = 32 V

C2V

f = 1 MHz;VR = 2 V

f = 1 MHz;VR = 25 V

2.5

31.5

2.75

11.5

1.05

0.55

C^25V

2.9

C^2V/C25V

C^25V/C28V

r^s

Capacitance Ratio

1.03

Series Resistance

Note :

VR = 5V, f = 470 MHz

0.7

Available in matched group for capacitance to 2.0%.

C(Max.)-C(Min.)

0.020

C(Min.)

(V^R=2~25V)

Marking

www.kexin.com.cn

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