Datasheet > 1SV276

1SV276

更新时间： 2024-09-26 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管测试光电二极管
页数	文件大小	规格书
1页	56K
描述
High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 (Typ.)

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1SV276 数据手册

Product specification

1SV276

SOD-323

Unit: mm

+0.1

-0.1

+0.05

0.85

-0.05

1.7

Features

+0.1

-0.1

2.6

1.0max

High Capacitance Ratio:C1V/C4V = 2.0Typ.)

Low Series Resistance:rs = 0.22 (Typ.)

0.475

0.375

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Value

Unit

Junction Temperature

T^j

125

Storage Temperature Range

T^stg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Conditions

Min

Typ

Max

Unit

I^R= 1

Reverse Current

Capacitance

I^R

VR = 10 V

C^1V

f = 1 MHz;V^R= 1 V

f = 1 MHz;V^R= 4 V

8.5

C^4V

Capacitance Ratio

Series Resistance

C^1V/C^4V

r^s

1.8

2.0

0.22

V^R= 1V, f = 470 MHz

0.4

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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