型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1SV273 | TOSHIBA |
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TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE | |
1SV274 | TOSHIBA |
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DIODE 35.5 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | |
1SV276 | TOSHIBA |
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VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO) | |
1SV276 | KEXIN |
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Silicon Epitaxial Planar Diode | |
1SV276 | TYSEMI |
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High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 (Typ.) | |
1SV276(TPH3) | TOSHIBA |
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VARACTOR DIODE,SINGLE,SO | |
1SV276_07 | TOSHIBA |
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VCO for UHF Band Radio | |
1SV276TPH3F | TOSHIBA |
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VCO for UHF Band Radio | |
1SV277 | TOSHIBA |
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VARIABLE CAPACITANCE DIODE (VCO FOR UH BAND RADIO) | |
1SV277 | TYSEMI |
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High Capacitance Ratio:C1V/C4V = 2.30Typ.) Low Series Resistance:rs = 0.42 (Typ.) |