Datasheet > 1SV269_07

1SV269_07

更新时间： 2024-11-12 02:55:07

品牌	Logo	应用领域
东芝 - TOSHIBA		有线电视
页数	文件大小	规格书
3页	275K
描述
CATV Tuning

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中文翻译

获取价格

数据手册

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1SV269_07 数据手册

1SV269

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV269

CATV Tuning

Unit: mm

•

High capacitance ratio: C2 V/C25 V = 11.5 (typ.)

Low series resistance: rs = 0.55 Ω (typ.)

Excellent C-V characteristics, and small tracking error.

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Peak reverse voltage

Junction temperature

Storage temperature range

36 (R = 10 kΩ)

125

°C

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

1-1E1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

2.9

⎯

Reverse current

Capacitance

= 32 V

⎯

C2 V

= 2 V, f = 1 MHz

31.5

2.75

11.5

1.05

0.55

Capacitance

C25 V

= 25 V, f = 1 MHz

2.5

11.0

1.03

⎯

Capacitance ratio

Series resistance

C2 V/C25 V

C25 V/C28 V

⎯

= 5 V, f = 470 MHz

0.7

Note 1: Available in matched group for capacitance to 2.0%.

C (max) − C (min)

0.02 (VR = 2~25 V)

C (min)

Marking

2007-11-01

12 3

中文翻译

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