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1SS400T1G_11 PDF预览

1SS400T1G_11

更新时间: 2024-02-19 09:06:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
3页 124K
描述
High-Speed Switching Diode

1SS400T1G_11 数据手册

 浏览型号1SS400T1G_11的Datasheet PDF文件第2页浏览型号1SS400T1G_11的Datasheet PDF文件第3页 
1SS400T1G,  
NSV1SS400T1G  
High-Speed  
Switching Diode  
Features  
http://onsemi.com  
HighSpeed Switching Applications  
Lead Finish: 100% Matte Sn (Tin)  
Qualified Maximum Reflow Temperature: 260°C  
Extremely Small SOD523 Package  
AECQ101 Qualified and PPAP Capable  
1
2
CATHODE  
ANODE  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
SOD523  
CASE 502  
PLASTIC  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
100  
200  
500  
Unit  
V
Reverse Voltage  
Forward Current  
V
R
I
F
mAdc  
mAdc  
MARKING DIAGRAM  
Peak Forward Surge Current  
I
FM(surge)  
THERMAL CHARACTERISTICS  
A M G  
G
Characteristic  
Symbol  
Max  
Unit  
1
Total Device Dissipation  
P
D
FR5 Board (Note 1) @T = 25°C  
200  
1.57  
mW  
mW/°C  
A
= Device Code  
A
Derate above 25°C  
M = Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction-to-Ambient  
Junction and Storage Temperature Range  
R
635  
°C/W  
°C  
JA  
T , T  
J
55 to  
+150  
stg  
*Date Code orientation may vary depending upon  
manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR4 @ Minimum Pad.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
ELECTRICAL CHARACTERISTICS  
1SS400T1G  
SOD523  
(PbFree)  
3000 / Tape &  
Reel  
Characteristic  
OFF CHARACTERISTICS  
Symbol Min Max  
Unit  
NSV1SS400T1G SOD523  
(PbFree)  
3000 / Tape &  
Reel  
Reverse Voltage Leakage Current  
(V = 80 Vdc)  
R
I
R
0.1  
3.0  
1.2  
4.0  
Adc  
pF  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Diode Capacitance  
C
D
V
F
(V = 0 V, f = 1.0 MHz)  
R
Forward Voltage  
(I = 100 mAdc)  
Vdc  
ns  
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc)  
F
R
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 7  
1SS400T1/D  
 

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