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1SS403(TH3HLS,F) PDF预览

1SS403(TH3HLS,F)

更新时间: 2024-02-23 03:23:14
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
4页 287K
描述
Rectifier Diode, 1 Element, 0.1A, 250V V(RRM), Silicon

1SS403(TH3HLS,F) 技术参数

生命周期:Obsolete包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.67
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
参考标准:AEC-Q101最大重复峰值反向电压:250 V
最大反向恢复时间:0.06 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SS403(TH3HLS,F) 数据手册

 浏览型号1SS403(TH3HLS,F)的Datasheet PDF文件第2页浏览型号1SS403(TH3HLS,F)的Datasheet PDF文件第3页浏览型号1SS403(TH3HLS,F)的Datasheet PDF文件第4页 
1SS403  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS403  
Unit: mm  
High Voltage Switching Applications  
AEC-Q101 Qualified (Note1)  
Two-pin small packages are suitable for higher mounting densities.  
Excellent in forward current and forward voltage  
characteristics  
: V  
= 0.90V (typ.)  
F (2)  
Fast reverse recovery time : t = 60ns (max)  
rr  
: C = 1.5pF (typ.)  
Small total capacitance  
T
Note1: For detail information, please contact to our sales.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
250  
200  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
300  
mA  
mA  
A
FM  
JEDEC  
I
100  
O
JEITA  
I
2
FSM  
P
1-1E1A  
TOSHIBA  
Power dissipation  
200 *  
125  
mW  
°C  
°C  
Weight: 0.0045g (typ.)  
Junction temperature  
T
j
Storage temperature range  
T
55 to 125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,  
with copper pad 4 mm × 4 mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 10mA  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
0.72  
0.90  
1.0  
1.2  
0.1  
1.0  
3.0  
60  
F (1)  
F (2)  
R (1)  
R (2)  
F
F
Forward voltage  
= 100mA  
I
I
V
V
V
= 50V  
R
R
R
Reverse current  
μA  
= 200V  
Total capacitance  
C
T
= 0, f = 1MHz  
1.5  
10  
pF  
ns  
Reverse recovery time  
t
I
= 10mA (Fig. 1)  
F
rr  
Start of commercial production  
1998-10  
1
2015-01-09  

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