1SS402
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS402
Unit in mm
High Speed Switching Applications
z Two independent diodes are mounted on four-pin ultra-small packages that
are suitable for higher mounting densities.
z Low forward voltage
z Low reverse current
z Small total capacitance
: V
= 0.50V (typ.)
F (3)
: I = 0.5μA (max)
R
: C = 3.9pF (typ.)
T
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
25
20
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge Current (10ms)
I
100 *
50 *
mA
mA
A
FM
I
O
I
1 *
FSM
P
―
―
JEDEC
Power dissipation
100 *
125
mW
°C
°C
JEITA
1-2U1A
TOSHIBA
Junction temperature
T
j
Weight: 0.006 g(typ.)
Storage temperature range
T
−55~125
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = Unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 1mA
Min
Typ.
Max
Unit
V
V
V
V
―
―
―
―
―
I
I
I
―
―
―
―
―
0.33
0.38
0.50
―
―
―
F (1)
F (2)
F (3)
R (1)
F
F
F
Forward voltage
= 5mA
= 50mA
0.55
0.5
5.0
Reverse current
I
V
V
= 20V
μA
R
R
Total capacitance
C
= 0, f = 1MHz
3.9
pF
T
Pin Assignment (Top View)
Marking
A7
1
2007-11-01