Datasheet > 1SS403(TPH3F)

1SS403(TPH3F)

更新时间： 2024-11-20 14:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	193K
描述
Rectifier Diode

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技术参数
数据手册

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1SS403(TPH3F) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.65	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS403(TPH3F) 数据手册

1SS403

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS403

Unit in mm

High Voltage Switching Applications

 Two-pin small packages are suitable for higher mounting densities.

 Excellent in forward current and forward voltage

characteristics

: V

= 0.90V (typ.)

F (2)

 Fast reverse recovery time : t = 60ns (typ.)

 Small total capacitance

: C = 1.5pF (typ.)

Absolute Maximum Ratings (Ta = 25C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

250

200

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

200 *

125

C

―

JEDEC

Junction temperature

―

JEITA

Storage temperature range

55~125

1-1E1A

TOSHIBA

stg

Weight: 0.0045g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,

with copper pad 4 mm × 4 mm.

Electrical Characteristics (Ta = 25C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.72

0.90

―

1.0

1.2

0.1

1.0

3.0

F (1)

F (2)

R (1)

R (2)

Forward voltage

―

= 100mA

= 50V

Reverse current

A

= 200V

―

Total capacitance

= 0, f = 1MHz

1.5

Reverse recovery time

= 10mA (Fig. 1)

2007-11-01

12 3 4

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