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1SS401 PDF预览

1SS401

更新时间: 2024-11-21 14:55:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ 光电二极管
页数 文件大小 规格书
4页 1508K
描述
SOT-323

1SS401 技术参数

生命周期:Contact Manufacturer包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.69
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.1 W最大重复峰值反向电压:20 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SS401 数据手册

 浏览型号1SS401的Datasheet PDF文件第2页浏览型号1SS401的Datasheet PDF文件第3页浏览型号1SS401的Datasheet PDF文件第4页 
GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-323 Plastic-Encapsulate Diodes  
1SS401 Schottoky Barrier Diode  
SOT-323  
FEATURES  
3
Low forward voltage  
Low reverse current  
Small total capacitance  
1
2
MARKING: D9  
1
3
2
Solid dot = Green molding compound device.  
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
25  
Non-Repetitive Peak Reverse Voltage  
VRM  
V
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
V
700  
300  
200  
Forward Continuous Current  
Average Rectified Output Current  
Power Dissipation  
IFM  
IO  
mA  
mA  
mW  
/W  
Pd  
Thermal Resistance Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
RθJA  
TJ  
1000  
-40 ~ +125  
-55 ~ +150  
TSTG  
Electrical Characteristics @Ta=25℃  
Parameter  
Symbol  
V (BR)  
VF1  
Min  
20  
Typ  
Max  
Unit  
V
Conditions  
IR=100μA  
IF=1mA  
Reverse breakdown voltage  
0.16  
V
Forward voltage  
VF2  
VF3  
IR  
0.22  
0.38  
V
V
IF=10mA  
IF=300mA  
VR=20V  
0.45  
50  
Reverse current  
uA  
Capacitance between terminals  
CT  
100  
pF  
VR=0,f=1MHz  
www.jscj-elec.com  
Rev. - 2.1  
1

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