Datasheet > 1SS402_07

1SS402_07

更新时间： 2024-09-26 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	181K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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1SS402_07 数据手册

1SS402

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS402

Unit in mm

High Speed Switching Applications

z Two independent diodes are mounted on four-pin ultra-small packages that

are suitable for higher mounting densities.

z Low forward voltage

z Low reverse current

z Small total capacitance

: V

= 0.50V (typ.)

F (3)

: I = 0.5μA (max)

: C = 3.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge Current (10ms)

100 *

50 *

1 *

FSM

―

JEDEC

Power dissipation

100 *

125

°C

JEITA

1-2U1A

TOSHIBA

Junction temperature

Weight: 0.006 g(typ.)

Storage temperature range

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = Unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.33

0.38

0.50

―

F (1)

F (2)

F (3)

R (1)

Forward voltage

= 5mA

= 50mA

0.55

0.5

5.0

Reverse current

= 20V

μA

Total capacitance

= 0, f = 1MHz

3.9

Pin Assignment (Top View)

Marking

2007-11-01

12 3

中文翻译

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