Datasheet > 1SS400T1/D

1SS400T1/D

更新时间： 2024-09-24 23:18:27

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1SS400T1 Data Sheet

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1SS400T1/D 数据手册

1SS400T1

Preferred Device

High−Speed

Switching Diode

• High-Speed Switching Applications

• Lead Finish: 100% Matte Sn (Tin)

• Qualified Maximum Reflow Temperature: 260°C

• Extremely Small SOD-523 Package

http://onsemi.com

MAXIMUM RATINGS (T = 25°C)

CATHODE

ANODE

Rating

Reverse Voltage

Symbol

Max

100

200

500

Unit

Forward Current

mAdc

Peak Forward Surge Current

THERMAL CHARACTERISTICS

Characteristic

FM(surge)

SOD-523

Symbol

Max

Unit

CASE 502

PLASTIC

Total Device Dissipation

FR- 5 Board (Note 1)

200

1.57

mW/°

T = 25°C

MARKING DIAGRAM

Derate above 25°C

Thermal Resistance

Junction-to-Ambient

625

150

°C/W

Junction and Storage Temperature

1. FR-4 @ Minimum Pad

T , T

J stg

°C

ELECTRICAL CHARACTERISTICS

= Specific Device Code

= Date Code

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(V = 80 Vdc)

0.1

3.0

ORDERING INFORMATION

Diode Capacitance

(V = 0.5 V, f = 1.0 MHz)

Device

Package

Shipping

1SS400T1

SOD-523

4 mm pitch

Forward Recovery Voltage

(I = 100 mAdc)

1.2

4.0

Vdc

3000/Tape & Reel

Reverse Recovery Time

(I = I = 10 mAdc)

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

June, 2003 - Rev. 0

1SS400T1/D

12 3 4

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