Datasheet > 1SS400V

1SS400V

更新时间： 2024-11-18 18:09:43

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RECTRON		/
页数	文件大小	规格书
4页	287K
描述
Reverse Voltage Vr : 80 V;Forward Current Io : 200 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.2 V;Reverse Current Ir : 0.1 uA;Recovery Time : 4 ns;Package / Case : SOD-523;Mounting Style : SMT/SMD;Notes : IFSM@t = 1.0us;Certified (AEC-Q101...etc) : AEC-Q101

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1SS400V 数据手册

1SS400V

150mW SOD-523 Fast Switching Diode

Features

Fast Switching Device (TRR <4.0 nS)

ꢀ

Power Dissipation of 150mW

High Stability and High Reliability

ꢀ

Low reverse leakage

P/N suffix V means AEC-Q101qualified,

e.g:1SS400V

ꢀ

P/N suffix V means Halogen-free

MARKING: A

Mechanical Data

ꢀ

Small Outline Plastic Package

Polarity: Color band denotes cathode end

Mounting Position: Any

ꢀ

Maximum Ratings & Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.)

Value

150

-55-+150

833

Parameters

Symbol

V^R

Unit

Reverse Voltage

Power Dissipation

R©JA

I^F

Operating junction temperature

Storage temperature range

Thermal Resistance from Junction to Ambient

Forward Continuous Current

ć/W

200

Non-repetitive Peak Forward Surge

Current @tp=1us; TA=25ć

I^FSM

2.0

Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics (Ratings at 25ć ambient temperature unless otherwise specified).

Limits

Max

Unit

Symbols

Parameter

Test Condition

Min

ꢀ

BreakdownVoltage

IR=100uA

VR=80

9 0

---

0.1

1.2

Reverse Leakage Current

Forward Voltage

ꢀ

IF=100mA

VFR

Forward recovery voltage

1.75

VR=0.5V IF= 10mA

RL=100Ω

TRR

---

Reverse Recovery Time

ꢀ ꢀ

Diode Capacitance

VR=0V, f=1MHZ

2021-12/114

REV:O

12 3 4

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