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1SS361CT,L3F PDF预览

1SS361CT,L3F

更新时间: 2024-10-14 21:13:43
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
4页 237K
描述
Rectifier Diode

1SS361CT,L3F 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.66二极管类型:RECTIFIER DIODE
Base Number Matches:1

1SS361CT,L3F 数据手册

 浏览型号1SS361CT,L3F的Datasheet PDF文件第2页浏览型号1SS361CT,L3F的Datasheet PDF文件第3页浏览型号1SS361CT,L3F的Datasheet PDF文件第4页 
1SS361CT  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS361CT  
Ultra High Speed Switching Application  
Unit: mm  
z
z
z
Small package  
Low forward voltage:  
V
= 0.9 V (typ.)  
F (3)  
Fast reverse recovery time: t = 1.6 ns (typ.)  
rr  
z Small total capacitance:  
CT = 0.9 pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
TOP VIEW  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
1.Anode1  
2.Anode2  
3.Cathode  
I
O
I
FSM  
P
CST3  
100**  
150  
mW  
°C  
°C  
Junction temperature  
T
j
Storage temperature  
T
55 to 150  
JEDEC  
JEITA  
stg  
*: Unit rating. Total rating = Unit rating × 1.5  
**: Mounted on FR4 board (10 mm × 10 mm × 1 mm (t))  
1-1S1S  
TOSHIBA  
Weight: 0.75 mg (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/  
voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 1 mA  
0.60  
0.72  
0.90  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10 mA  
= 100 mA  
1.2  
0.1  
0.5  
3.0  
I
I
V
V
V
= 30 V  
= 80 V  
R
R
R
Reverse current  
μA  
Total capacitance  
C
T
= 0 V, f = 1 MHz  
0.9  
1.6  
pF  
ns  
Reverse recovery time  
t
I
= 10 mA, Fig.1  
F
rr  
Start of commercial production  
2004-08  
1
2014-03-01  

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