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1SS361_07 PDF预览

1SS361_07

更新时间: 2024-11-25 03:54:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
3页 217K
描述
Ultra High Speed Switching Application

1SS361_07 数据手册

 浏览型号1SS361_07的Datasheet PDF文件第2页浏览型号1SS361_07的Datasheet PDF文件第3页 
1SS361  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS361  
Ultra High Speed Switching Application  
Unit in mm  
z Small package  
z Low forward voltage  
: V = 0.9V (typ.)  
F
z Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 0.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300 *  
100 *  
2 *  
mA  
mA  
A
FM  
I
O
I
FSM  
P
100  
mW  
°C  
°C  
JEDEC  
Junction temperature  
T
125  
j
EIAJ  
Storage temperature  
T
55~125  
stg  
TOSHIBA  
Weight: 2.4mg  
1-2S1B  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Unit rating. Total rating = unit rating × 1.5  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.60  
0.72  
0.90  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.9  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I = 10mA, Fig.1  
F
rr  
1
2007-11-01  

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