Datasheet > 1SS357(TH3

1SS357(TH3

更新时间： 2024-10-30 14:46:11

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	207K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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1SS357(TH3 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.64	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS357(TH3 数据手册

1SS357

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS357

Low Voltage High Speed Switching

Unit: mm

z Low forward voltage

z Low reverse current

z Small package

: V

= 0.54V (typ.)

F (3)

: I = 5μA (max)

: SC-70

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

200*

125

°C

Junction temperature

Storage temperature range

−55 to 125

stg

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

JEITA

TOSHIBA

1-1E1A

Weight: 0.004g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Mounted on a glass epoxy circuit board of 20 × 20mm,

pad dimension of 4 × 4mm.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.28

0.36

0.54

―

F (1)

F (2)

F (3)

R (1)

Forward voltage

= 10mA

= 100mA

0.60

Reverse current

= 40V

μA

Total capacitance

= 0, f = 1MH

Pin Assignment (Top View)

Marking

Start of commercial production

1990-01

2014-03-01

12 3

中文翻译

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