5秒后页面跳转
1SS358 PDF预览

1SS358

更新时间: 2024-10-30 06:22:23
品牌 Logo 应用领域
科信 - KEXIN 二极管
页数 文件大小 规格书
1页 37K
描述
Schottkty Barrier Diode

1SS358 数据手册

  
SMD Type  
Diodes  
Schottkty Barrier Diode  
1SS358  
SOT-23  
Unit: mm  
Features  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Small interterminal capacitance  
3
Low forward voltage and excellent detection efficiency  
High breakdown voltage  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Absolute Maximum Ratings Ta = 25  
Parameter  
peak reverse voltage  
Symbol  
Rating  
Unit  
V
VR  
IF  
55  
10  
Forward current  
mA  
mW  
Power dissipation  
P
150  
Junction Temperature  
Storage Temperature range  
Tj  
125  
Tstg  
-55 to + 125  
Electrical Characteristics Ta = 25  
Parameter  
Forward voltage  
Symbol  
Test Conditions  
IF = 1 mA  
Min  
Typ  
Max  
0.35  
Unit  
V
VF  
VR  
IF  
Reverse voltage  
55  
10  
V
IR=100  
VF=1V  
A
Forward Current  
mA  
A
Reverse current  
IR  
VR = 40V  
50  
Interterminal l capacitance  
C
VR = 0, f = 1.0 MHz  
0.45  
pF  
Marking  
Marking  
DH  
1
www.kexin.com.cn  

与1SS358相关器件

型号 品牌 获取价格 描述 数据表
1SS358PT CHENMKO

获取价格

SWITCHING DIODE VOLTAGE 90 Volts CURRENT 0.1 Ampere
1SS360 TOSHIBA

获取价格

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
1SS360(T5L,PP,F) TOSHIBA

获取价格

Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon
1SS360(TE85L,F) TOSHIBA

获取价格

RECTIFIER DIODES,COMMON ANODE,85V V(RRM),SOT-416
1SS360,LJ(CT TOSHIBA

获取价格

Rectifier Diode
1SS360_07 TOSHIBA

获取价格

Ultra High Speed Switching Application
1SS360F TOSHIBA

获取价格

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
1SS360FV TOSHIBA

获取价格

暂无描述
1SS360TE85L TOSHIBA

获取价格

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS360TE85R TOSHIBA

获取价格

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode