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1SS361(T5LCK,F) PDF预览

1SS361(T5LCK,F)

更新时间: 2024-10-31 05:07:55
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 222K
描述
Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

1SS361(T5LCK,F) 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.66
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.1 W
最大重复峰值反向电压:85 V最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1SS361(T5LCK,F) 数据手册

 浏览型号1SS361(T5LCK,F)的Datasheet PDF文件第2页浏览型号1SS361(T5LCK,F)的Datasheet PDF文件第3页 
1SS361  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS361  
Ultra High Speed Switching Application  
Unit: mm  
z Small package  
z Low forward voltage  
: V = 0.9V (typ.)  
F
z Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 0.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300 *  
100 *  
2 *  
mA  
mA  
A
FM  
I
O
I
FSM  
P
100  
mW  
°C  
°C  
JEDEC  
Junction temperature  
T
j
125  
JEITA  
Storage temperature  
T
55 to 125  
stg  
TOSHIBA  
1-2S1B  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 2.4mg (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Unit rating. Total rating = unit rating × 1.5  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.60  
0.72  
0.90  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.9  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I = 10mA, Fig.1  
F
rr  
Start of commercial production  
1990-10  
1
2014-03-01  

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