Datasheet > 1SS15B1

1SS15B1

更新时间： 2024-11-15 00:04:31

品牌	Logo	应用领域
其他 - ETC		二极管开关手机
页数	文件大小	规格书
3页	355K
描述
SOD-123 Plastic-Encapsulate Diode 用于手机,侧按开关

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中文翻译

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数据手册

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1SS15B1 数据手册

SUN RISE ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diode

SCHOTTKY RECTIFIER

1SS15A1 / 1SS15B1 / 1SS15C1

SOD-123

Features

Low Forward Voltage Drop

Guard Ring Construction for

Transient Protection

High Conductance

2.70

3.70

Unit:mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

1SS15A1

1SS15B1

1SS15C1

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

@ T = 100°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

P_d

Power Dissipation (Note 1)

450

244

R_qJA

Typical Thermal Resistance Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Voltage Rate of Change

°C/W

°C

T_j,T_STG

dv/dt

-65 to +125

1000

V/ms

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbo

1SS15A1

1SS15B 1 1SS15C1 Unit

Test Conditions

_R= 250mA

V_(BR)R

I_R= 130mA

I_R= 20mA

Minimum Reverse Breakdown Voltage (Note 2)

I_F= 0.1A, T_j= 25°C

I_F= 0.5A, T_j= 25°C

I_F= 1.0A, T_j= 25°C

0.300

0.385

0.500

0.375

0.430

0.525

0.480

0.550

Maximum Forward Voltage Drop

(Note 2)

V_FM

100

150

200

At rated DC blocking Voltage

ꢀ

Maximum Leakage Current

(Note 2)

IRM

C_j

f = 1MHz, V_R= 0V DC

Junction Capacitance

120

Notes:

1. Valid provided that leads are kept at ambient temperature.

2. Pulse Test: Pulse width = 300ms, Duty Cycle £ 2%.

1 /2

12 3

中文翻译

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