Datasheet > 1SS154TE85L

1SS154TE85L

更新时间： 2024-11-16 06:27:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	142K
描述
DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode

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中文翻译

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数据手册

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1SS154TE85L 数据手册

1SS154

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS154

UHF~S Band Mixer/Detector Applications

Unit: mm

•

Small package.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−30~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

SC-59

TOSHIBA

1-3G1A

Weight: 12 mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 10 μA

⎯

0.5

0.35

⎯

μA

Reverse current

Forward voltage

Total capacitance

= 5 V

⎯

= 0.1 mA

= 10 mA

⎯

F (1)

F (2)

0.5

0.8

= 0, f = 1 MHz

⎯

Marking

2007-11-01

12 3

中文翻译

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