1SS154
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS154
UHF~S Band Mixer/Detector Applications
Unit: mm
•
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Rating
Unit
V
6
30
V
R
Forward current
I
mA
°C
°C
F
Junction temperature
Storage temperature range
T
j
125
T
stg
−30~125
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
SC-59
TOSHIBA
1-3G1A
Weight: 12 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 10 μA
R
6
⎯
⎯
⎯
0.5
0.35
⎯
V
μA
V
R
Reverse current
Forward voltage
Forward voltage
Total capacitance
I
V
= 5 V
R
⎯
⎯
⎯
⎯
R
V
V
I
I
= 0.1 mA
= 10 mA
⎯
F (1)
F (2)
F
F
0.5
0.8
V
C
V
= 0, f = 1 MHz
R
⎯
pF
T
Marking
1
2007-11-01