Datasheet > 1N914BWS

1N914BWS

更新时间： 2024-11-21 11:12:15

品牌	Logo	应用领域
安森美 - ONSEMI		PC 光电二极管信号二极管
页数	文件大小	规格书
5页	226K
描述
小信号二极管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N914BWS 数据手册

Small Signal Diodes

1N4148WS, 1N4448WS,

1N914BWS

Features

• General Purpose Diodes

• Fast Switching Device (T < 4.0 ns)

www.onsemi.com

• Very Small and Thin SMD Package

• Moisture Level Sensitivity 1

• Matte Tin (Sn) Lead Finish

SOD−323FL

• Green Mold Compound

(Flat Lead)

CASE 477AB

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS

Band Indicates Cathode

Parameter

Symbol

Value

100

Unit

Non−Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Continuous Forward Current

RSM

RRM

FRM

ELECTRICAL SYMBOL

300

150

(1)

(2)

Cathode

Anode

Non−repetitive Peak Forward Surge

Current

FSM

DEVICE MARKING INFORMATION

See general marking information in the device marking

section on page 3 of this data sheet.

Pulse Width = 1.0 s

Pulse Width = 1.0 ms

1.0

4.0

Operating Junction Temperature

Storage Temperature Range

+150

°C

−55 to +150

STG

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)

Symbol

Parameter

Value

200

Unit

Power Dissipation (T = 25°C)

Thermal Resistance, Junction−to−Ambient (Note 1)

500

°C/W

1. Device mounted on FR−4 PCB minimum land pad.

ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)

Symbol

Parameter

Conditions

= 100 mA

Min

100

−

Max

−

Unit

Breakdown Voltage

Reverse Current

Forward Voltage

= 5 mA

−

= 20 V

= 75 V

−

1N4448WS / 1N914BWS

I = 5 mA

0.62

−

0.72

1N4148WS

I = 10 mA

1N4448WS / 1N914BWS

I = 100 mA

−

Diode Capacitance

= 0, f = 1.0 MHz

−

Reverse Recovery Time

I = 10 mA, I = 60 mA,

−

= 1 mA, R = 100 W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Publication Order Number:

July, 2021 − Rev. 3

1N4148WS/D

12 3 4 5

中文翻译

下载PDF

与1N914BWS相关器件

型号	品牌	获取价格	描述	数据表
1N914BWSRR	TSC	获取价格	200mW High Speed SMD Switching Diode
1N914BWS-RR	TSC	获取价格	200mW High Speed SMD Switching Diode
1N914BWSRRG	TSC	获取价格	200mW High Speed SMD Switching Diode
1N914BWS-RRG	TSC	获取价格	200mW High Speed SMD Switching Diode
1N914BWT	FAIRCHILD	获取价格	High Conductance Fast Switching Diode
1N914BWT	ONSEMI	获取价格	小信号二极管
1N914BWT	RECTRON	获取价格	Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Vo
1N914BWTV	RECTRON	获取价格	Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Vo
1N914BX	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon,
1N914FV	ROHM	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35

与1N914BWS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

1N914BWS

1N914BWS 数据手册

与1N914BWS相关器件

与1N914BWS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N914BWS

1N914BWS 数据手册

与1N914BWS相关器件

与1N914BWS相关文章

您还可以找

您在本页遇到什么问题？