1N914BWT

更新时间： 2024-11-24 03:54:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管开关光电二极管 PC
页数	文件大小	规格书
6页	123K
描述
High Conductance Fast Switching Diode

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中文翻译

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数据手册

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1N914BWT 数据手册

March 2008

1N4148WT / 1N4448WT / 1N914BWT

High Conductance Fast Switching Diode

•

Fast Switching Diode (Trr <4.0nsec)

Flat Lead, Surface Mount Device under 0.70mm Height

Extremely Small Outline Plastic Package SOD523F

Moisture Level Sensitivity 1

Pb-free Version and RoHS Compliant

Matte Tin (Sn) Lead Finish

Device Marking Code

Device Type Device Marking

1N4148WT

1N4448WT

1N914BWT

Green Mold Compound

SOD-523F

Band Indicates Cathode*

Absolute Maximum Ratings* T_a=25°C unless otherwise noted

Symbol Parameter

Value

Units

V_RSM

Non-Repetitive Peak Reverse Voltage

V_RRM

I _FRM

T_J

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Operating Junction Temperature Range

Storage Temperature Range

300

-55 to +150

°C

T_STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Unit

R_θJA

P_D

Thermal Resistance, Junction to Ambient

500

°C/W

Power Dissipation(T_C=25°C)

200

*Device mounted on FR-4 PCB minimum land pad.

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

I_R= 100 μA

I_R= 5 μA

100

BV_R

Breakdown Voltage

V_R= 20 V

V_R= 75 V

μA

I_R

Reverse Current

1N4448WT/ 914WT I_F= 5 mA

1N4448WT I_F= 10 mA

1N4448WT/ 914WT I_F= 100 mA

V_R= 0, f = 1 MHz

0.62

0.72

V_F

Forward Voltage

C_O

Diode Capacitance

Reverse Recovery Time

I _F= 10 mA, V_R= 6.0 V

I _RR= 1 mA, R_L= 100 Ω

T_RR

1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0

www.fairchildsemi.com

12 3 4 5 6

中文翻译

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