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1N914G PDF预览

1N914G

更新时间: 2024-11-25 14:54:39
品牌 Logo 应用领域
先科 - SWST 开关小信号开关二极管
页数 文件大小 规格书
3页 74K
描述
小信号开关二极管

1N914G 数据手册

 浏览型号1N914G的Datasheet PDF文件第2页浏览型号1N914G的Datasheet PDF文件第3页 
1N914G  
Silicon Epitaxial Planar Switching Diode  
for high speed switching application  
PINNING  
DESCRIPTION  
Cathode  
PIN  
1
Features  
• Ultra small surface mounting type  
• High reliability  
Anode  
2
2
1
A
Top View  
Marking Code: "A"  
Simplified outline SOD-723 and symbol  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VRRM  
Value  
100  
Unit  
V
Repetitive Reverse Voltage  
Average Rectified Forward Current  
IF(AV)  
200  
mA  
Non-repetitive Peak Forward Surge Current  
at t = 1 s  
0.5  
1
IFSM  
A
at t = 1 μs  
Power Dissipation  
Ptot  
RθJA  
Tj  
200  
625  
mW  
O
Thermal Resistance Junction to Ambient  
Junction Temperature  
C/W  
O
C
150  
O
C
Storage Temperature Range  
Tstg  
- 55 to + 150  
O
Electrical Characteristics (Ta = 25 C)  
Parameter  
Symbol  
Min.  
Max.  
Unit  
V
Forward Voltage  
at IF = 10 mA  
VF  
-
1
Reverse Breakdown Voltage  
at IR = 5 µA  
at IR = 100 µA  
V(BR)R  
V(BR)R  
75  
100  
-
-
V
V
Reverse Current  
at VR = 20 V  
at VR = 75 V  
-
-
-
25  
5
50  
nA  
µA  
µA  
IR  
O
at VR = 20 V, TJ = 150 C  
Total Capacitance  
at VR = 0 V, f = 1 MHz  
Ctot  
trr  
-
4
pF  
ns  
Reverse Recovery Time  
at IF = IR = 30 mA, RL = 100 , IRR = 3 mA  
-
50  
®
Dated : 28/05/2015 Rev:01  

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