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1N914BWSRR PDF预览

1N914BWSRR

更新时间: 2024-11-01 05:56:39
品牌 Logo 应用领域
TSC 二极管开关光电二极管
页数 文件大小 规格书
2页 96K
描述
200mW High Speed SMD Switching Diode

1N914BWSRR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.59Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

1N914BWSRR 数据手册

 浏览型号1N914BWSRR的Datasheet PDF文件第2页 
1N4148WS/1N4448WS/1N914BWS  
200mW High Speed SMD Switching Diode  
Small Signal Diode  
SOD-323F  
B
C
A
Features  
—Fast switching device(Trr<4.0nS)  
—Surface device type mounting  
—Moisture sensitivity level 1  
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
E
F
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
Max  
Min  
Max  
Mechanical Data  
—Case : Flat lead SOD-323 small outline plastic package  
A
B
C
D
E
F
1.15 1.35 0.045 0.053  
2.30 2.70 0.091 0.106  
0.25 0.40 0.010 0.016  
1.60 1.80 0.063 0.071  
0.80 1.00 0.031 0.039  
0.05 0.20 0.002 0.008  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 4.85±0.5 mg  
Ordering Information  
Part No.  
Packing  
Package  
1NxxxxWS RR  
3Kpcs / 7" Reel  
SOD-323F  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
200  
Units  
mW  
V
Power Dissipation  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRSM  
VRRM  
IFRM  
100  
75  
V
300  
mA  
mA  
°C/W  
°C  
IO  
150  
Thermal Resistance (Junction to Ambient) (Note 1)  
Junction and Storage Temperature Range  
RθJA  
TJ, TSTG  
500  
-65 to + 150  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
Units  
100  
75  
-
-
IR=100uA  
Reverse Breakdown Voltage  
IR=5uA  
V(BR)  
V
Forward Voltage  
0.62  
0.72  
1.0  
1.0  
25  
1N4448WS, 1N914BWS IF=5.0mA  
VF  
1N4148W  
IF=10.0mA  
S
-
-
-
-
-
-
V
1N4448WS, 1N914BWS IF=100.0mA  
nA  
μA  
pF  
ns  
VR=20V  
Reverse Leakage Current  
VR=75V  
IR  
5.0  
4.0  
4.0  
CJ  
Junction Capacitance  
VR=0, f=1.0MHz  
Trr  
Reverse Recovery Time (Note 2)  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA  
Version : C09  

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