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1N6060E3 PDF预览

1N6060E3

更新时间: 2024-11-06 20:50:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 205K
描述
Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6060E3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-MALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.5最大击穿电压:82.5 V
最小击穿电压:67.5 V击穿电压标称值:75 V
外壳连接:ISOLATED最大钳位电压:108 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-202AA
JESD-30 代码:O-MALF-W2最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
最大功率耗散:1 W最大重复峰值反向电压:60 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N6060E3 数据手册

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