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1N6061AB PDF预览

1N6061AB

更新时间: 2024-11-07 04:29:03
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
3页 402K
描述
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13, HERMETIC SEALED, METAL, AXIAL PACKAGE-2

1N6061AB 技术参数

生命周期:Transferred零件包装代码:DO-13
包装说明:O-MALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
其他特性:LOW IMPEDANCE最大击穿电压:86.1 V
最小击穿电压:77.9 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-13
JESD-30 代码:O-MALF-W2最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL

1N6061AB 数据手册

 浏览型号1N6061AB的Datasheet PDF文件第2页浏览型号1N6061AB的Datasheet PDF文件第3页 

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