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1N6061 PDF预览

1N6061

更新时间: 2024-11-06 20:22:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网二极管电视
页数 文件大小 规格书
1页 58K
描述
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13, METAL PACKAGE-2

1N6061 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-MALF-W2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.5Is Samacsys:N
最大击穿电压:90.2 V最小击穿电压:73.8 V
击穿电压标称值:82 V外壳连接:CATHODE
最大钳位电压:118 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-13JESD-30 代码:O-MALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:5 W
最大重复峰值反向电压:66 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N6061 数据手册

  

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