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1N6061 PDF预览

1N6061

更新时间: 2024-11-06 20:21:55
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
2页 380K
描述
Trans Voltage Suppressor Diode, 1500W, 66V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6061 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-13包装说明:O-MALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.81Is Samacsys:N
其他特性:CAPACITANCE IS CAPTURED FROM THE GRAPH最大击穿电压:90.2 V
最小击穿电压:73.8 V击穿电压标称值:82 V
外壳连接:CATHODE最大钳位电压:118 V
配置:SINGLE最小二极管电容:10000 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-MALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:66 V最大反向电流:5 µA
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N6061 数据手册

 浏览型号1N6061的Datasheet PDF文件第2页 

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