是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DO-13 | 包装说明: | O-MALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.81 | Is Samacsys: | N |
其他特性: | CAPACITANCE IS CAPTURED FROM THE GRAPH | 最大击穿电压: | 90.2 V |
最小击穿电压: | 73.8 V | 击穿电压标称值: | 82 V |
外壳连接: | CATHODE | 最大钳位电压: | 118 V |
配置: | SINGLE | 最小二极管电容: | 10000 pF |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-MALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 66 V | 最大反向电流: | 5 µA |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6061A | LITTELFUSE |
获取价格 |
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors | |
1N6061A | NJSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSOR | |
1N6061A | PROTEC |
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Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon | |
1N6061A | STMICROELECTRONICS |
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1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13, METAL PACKAGE-2 | |
1N6061A | MICROSEMI |
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BIDIRECTIONAL TRANSIENT ABSORPTION ZENER | |
1N6061AB | LITTELFUSE |
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Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13, HERMETIC | |
1N6061ACOX.120 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Bidirectional, 1 Element, Silicon, | |
1N6061ACOX.200 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Bidirectional, 1 Element, Silicon, | |
1N6061ACOX.250 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Bidirectional, 1 Element, Silicon, | |
1N6061AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |