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1N5417US PDF预览

1N5417US

更新时间： 2024-02-16 04:41:16
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管快速恢复二极管
页数 文件大小 规格书
3页 325K
描述
VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

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中文翻译

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1N5417US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：O-LELF-R2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
应用：FAST RECOVERY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
最大非重复峰值正向电流：80 A元件数量：1
相数：1端子数量：2
最大输出电流：3 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
参考标准：MIL-19500最大反向恢复时间：0.15 µs
表面贴装：YES端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N5417US 数据手册

 浏览型号1N5417US的Datasheet PDF文件第2页浏览型号1N5417US的Datasheet PDF文件第3页 
1N5415US thru 1N5420US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse  
voltages from 50 to 600 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in axial-leaded packages for thru-hole mounting by deleting the “US”  
suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
•
Fast recovery 3 Amp rectifiers 50 to 600 V  
JEDEC registered 1N5415 to 1N5420 series  
•
•
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 50 to 600 Volts.  
•
•
•
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
JAN, JANTX, JANTXV, and JANS available per MIL-  
•
Controlled avalanche with peak reverse power  
PRF-19500/411  
capability  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5415 thru 1N5420)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
Junction Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Storage Temperature: -65oC to +175oC  
Tungsten slugs  
Thermal Resistance: 10oC/W junction to endcap  
TERMINALS: End caps are solid Silver with  
Tin/Lead (Sn/Pb) finish  
MARKING: Cathode band only  
POLARITY: Cathode indicated by band  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 539 mg  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
•
•
•
•
•
Average Rectified Forward Current (IO): 3 Amps @  
TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1)  
•
•
Forward Surge Current (8.3 ms half sine): 80 Amps  
Solder temperatures: 260oC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
VF @ 9 A  
MAXIMUM  
REVERSE  
CURRENT  
IR @ VRWM  
MAXIMUM  
REVERSE  
RECOVERY  
AVERAGE  
RECTIFIED  
CURRENT IO  
(NOTE 1)  
TYPE  
VRWM  
VBR @ 50µA  
TIME t  
rr  
MIN.  
MAX.  
25oC  
100oC  
µA  
55oC  
100oC  
AMPS  
(NOTE 2)  
ns  
VOLTS  
VOLTS  
VOLTS  
µA  
AMPS  
1N5415US  
1N5416US  
1N5417US  
1N5418US  
1N5419US  
1N5420US  
50V  
55V  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
20  
20  
20  
20  
20  
20  
150  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
100V  
200V  
400V  
500V  
600V  
110V  
220V  
440V  
550V  
660V  
150  
150  
150  
250  
400  
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate  
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A  
Copyright 2004  
11-22-2004 REV A  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

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1N5417US 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N5417US MICROSEMI

完全替代

 Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2

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