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1N5419 PDF预览

1N5419

更新时间: 2024-09-26 20:24:27
品牌 Logo 应用领域
固锝 - GOOD-ARK 快速恢复二极管
页数 文件大小 规格书
2页 285K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 500V V(RRM), Silicon,

1N5419 技术参数

生命周期:Active包装说明:E-LALF-W2
Reach Compliance Code:compliant风险等级:5.6
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:E-LALF-W2最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM最大重复峰值反向电压:500 V
最大反向电流:1 µA最大反向恢复时间:0.25 µs
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N5419 数据手册

 浏览型号1N5419的Datasheet PDF文件第2页 
1N5419  
SINTERED GLASS JUNCTION  
FAST AVALANCHE RECTIFIER  
G4  
Features  
Glass passivated  
Hermetically sealed package  
Low reverse current  
Soft recovery characteristics  
Mechanical Data  
Case: G-4 sintered glass case  
Terminal: Plated axial leads solderable per JSTD-002  
Polarity: Color band denotes cathode  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratings and Electrical Characteristics  
(single-phase, half-wave, 60Hz, TA=25°C unless otherwise noted  
Symbol  
1N5419  
Unit  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
500  
350  
500  
550  
V
V
V
V
Maximum DC Blocking Voltage  
VBR  
Maximum Reverse Breakdown Voltage  
IR=50μA  
Maximum Average Forward Rectified Current  
3/8”lead Length at Ta=55°C  
Peak Forward Surge Current 8.3ms Single Half Sine-wave  
Superimposed on Rated Load  
IFAV  
3.0  
80  
A
IFSM  
VF  
A
V
1.5  
1.0  
Maximum Forward Voltage at Forward Current 9.0A  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta =25°C  
Ta =100°C  
IR  
μA  
20.0  
Maximum Reverse Recovery Time  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
(Note 3)  
Trr  
Cj  
250  
50.0  
20.0  
nS  
pF  
Rth(ja)  
°C/W  
Storage and Operating Junction Temperature  
Tstg, Tj  
-65 to +175  
°C  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
1/2  

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