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1N5419 PDF预览

1N5419

更新时间: 2024-09-26 07:22:31
品牌 Logo 应用领域
CENTRAL 整流二极管快速恢复二极管
页数 文件大小 规格书
2页 282K
描述
FAST RECOVERY GLASS PASSIVATED SILICON RECTIFIER 3 AMP, 500 AND 600 VOLTS

1N5419 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.18
其他特性:HIGH RELIABILITY应用:FAST RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:E-LALF-W2
JESD-609代码:e0最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.25 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5419 数据手册

 浏览型号1N5419的Datasheet PDF文件第2页 
1N5419  
1N5420  
www.centralsemi.com  
FAST RECOVERY GLASS  
PASSIVATED SILICON RECTIFIER  
3 AMP, 500 AND 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N5419 and  
1N5420 are Silicon Rectifiers mounted in a hermetically  
sealed, glass passivated package, designed for general  
purpose applications where fast reverse recovery times  
and high reliability are required.  
MARKING: FULL PART NUMBER  
GPR-4AM CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
1N5419  
1N5420  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
500  
600  
V
RRM  
V
500  
350  
600  
420  
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =55°C)  
I
3.0  
80  
A
A
O
Peak Forward Surge Current, tp=8.3ms  
I
A
FSM  
T , T  
Operating and Storage Junction Temperature  
-65 to +200  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V =Rated V  
1.0  
µA  
R
R
R
R
RRM  
RRM  
RRM  
V =Rated V  
, T =100°C  
20  
µA  
mA  
V
R
A
V =Rated V  
, T =175°C  
2.0  
1.1  
1.5  
R
A
V
I =3.0A  
F
F
F
V
I =9.0A  
V
F
BV  
I =50µA (1N5419)  
550  
660  
V
R
R
R
BV  
I =50µA (1N5420)  
V
R
C
C
V =12V, f=1.0MHz (1N5419)  
110  
100  
250  
400  
pF  
pF  
ns  
ns  
J
J
R
V =12V, f=1.0MHz (1N5420)  
R
t
t
I =0.5A, I =1.0A, I =0.25A (1N5419)  
rr  
rr  
F
R
rr  
I =0.5A, I =1.0A, I =0.25A (1N5420)  
F
R
rr  
R2 (11-April 2011)  

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