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1N5418TR PDF预览

1N5418TR

更新时间: 2024-02-18 11:20:19
品牌 Logo 应用领域
威世 - VISHAY 二极管软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 105K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

1N5418TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.16
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向电流:1 µA
最大反向恢复时间:0.15 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5418TR 数据手册

 浏览型号1N5418TR的Datasheet PDF文件第2页浏览型号1N5418TR的Datasheet PDF文件第3页浏览型号1N5418TR的Datasheet PDF文件第4页 
1N5417, 1N5418  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Low forward voltage drop  
• High pulse current capability  
949588  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: SOD-64  
APPLICATIONS  
• Fast rectification diode  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-64  
1N5417  
1N5418  
V
V
R = 200 V; IFAV = 3 A  
R = 400 V; IFAV = 3 A  
SOD-64  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VALUE  
200  
400  
100  
3
UNIT  
1N5417  
1N5418  
V
R = VRRM  
R = VRRM  
IFSM  
V
V
A
A
Reverse voltage = repetitive peak  
reverse voltage  
See electrical characteristics  
V
Peak forward surge current  
Average forward current  
tp = 10 ms, half sine wave  
l = 10 mm, TL = 25 °C  
IFAV  
Non repetitive reverse avalanche  
energy  
I
(BR)R = 1 A  
ER  
20  
mJ  
°C  
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
25  
70  
K/W  
K/W  
Junction ambient  
RthJA  
Document Number: 86097  
Rev. 1.4, 30-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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