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1N5418-BYW172G PDF预览

1N5418-BYW172G

更新时间: 2024-02-26 17:35:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 34K
描述
Rectifier Diode, 1 Element, 3A, 400V V(RRM),

1N5418-BYW172G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-609代码:e2
最大非重复峰值正向电流:100 A元件数量:1
最高工作温度:175 °C最大输出电流:3 A
最大重复峰值反向电压:400 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Silver (Sn96.5Ag3.5)
Base Number Matches:1

1N5418-BYW172G 数据手册

 浏览型号1N5418-BYW172G的Datasheet PDF文件第2页浏览型号1N5418-BYW172G的Datasheet PDF文件第3页浏览型号1N5418-BYW172G的Datasheet PDF文件第4页 
1N5417.1N5418  
Vishay Telefunken  
Fast Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Soft recovery characteristics  
Low reverse current  
Low forward voltage drop  
High pulse current capability  
94 9588  
Applications  
Fast rectifiers in S.M.P.S  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
1N5417 –  
BYW172D  
BYW172F  
1N5418 –  
BYW172G  
Symbol  
Value  
200  
Unit  
V
Reverse voltage=  
Repetitive peak reverse voltage  
V =  
R
300  
V
RRM  
400  
Peak forward surge current  
Average forward current  
t =10ms, single half sine wave  
p
I
I
100  
3
A
A
FSM  
FAV  
Junction and storage  
temperature range  
Non repetitive reverse  
avanlanche energy  
T =T  
–65...+175  
20  
C
j
stg  
I
=1A  
E
R
mJ  
(BR)R  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
Value  
25  
70  
Unit  
K/W  
l=10mm, T =constant  
L
R
thJA  
on PC board with spacing 25mm  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
I =3A  
1.1  
1.5  
1
20  
F
Forward voltage  
Reverse current  
V
F
V
I =9A  
F
V =V  
R
RRM  
I
R
A
ns  
V =V  
, T =100 C  
R
RRM  
j
Reverse recovery time I =0.5A, I =1A, i =0.25A  
t
rr  
75  
100  
F
R
R
www.vishay.com  
1 (4)  
Document Number 86001  
Rev. 4, 27-Sep-00  

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