Datasheet > 1N5417_10

1N5417_10

更新时间： 2024-01-31 03:18:44

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	105K
描述
Fast Avalanche Sinterglass Diode

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中文翻译

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数据手册

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1N5417_10 数据手册

1N5417, 1N5418

Vishay Semiconductors

Fast Avalanche Sinterglass Diode

FEATURES

• Glass passivated junction

• Hermetically sealed package

• Low reverse current

• Soft recovery characteristics

• Low forward voltage drop

• High pulse current capability

949588

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: SOD-64

APPLICATIONS

• Fast rectification diode

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 858 mg

PARTS TABLE

PART

TYPE DIFFERENTIATION

PACKAGE

SOD-64

1N5417

1N5418

_R= 200 V; I_FAV= 3 A

_R= 400 V; I_FAV= 3 A

SOD-64

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

200

400

100

UNIT

1N5417

1N5418

_R= V_RRM

I_FSM

Reverse voltage = repetitive peak

reverse voltage

See electrical characteristics

Peak forward surge current

Average forward current

t_p= 10 ms, half sine wave

l = 10 mm, T_L= 25 °C

I_FAV

Non repetitive reverse avalanche

energy

_(BR)R= 1 A

E_R

°C

Junction and storage temperature

range

T_j= T_stg

- 55 to + 175

MAXIMUM THERMAL RESISTANCE (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Lead length l = 10 mm, T_L= constant

On PC board with spacing 25 mm

R_thJA

K/W

Junction ambient

R_thJA

Document Number: 86097

Rev. 1.4, 30-Jul-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4

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与1N5417_10相关器件

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1N5417BK	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
1N5417-BYW172D	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 200V V(RRM),
1N5417-BYW172F	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 300V V(RRM),
1N5417C.TR	SEMTECH	获取价格	Rectifier Diode,
1N5417R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon,
1N5417-TAP	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HALOGEN FREE AND
1N5417TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
1N5417US	SENSITRON	获取价格	HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS
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1N5417USE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, MELF-2