Datasheet > 1N5417-BYW172D

1N5417-BYW172D

更新时间： 2024-09-26 09:52:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	34K
描述
Rectifier Diode, 1 Element, 3A, 200V V(RRM),

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1N5417-BYW172D 数据手册

1N5417.1N5418

Vishay Telefunken

Fast Silicon Mesa Rectifiers

Features

Glass passivated junction

Hermetically sealed package

Soft recovery characteristics

Low reverse current

Low forward voltage drop

High pulse current capability

94 9588

Applications

Fast rectifiers in S.M.P.S

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

Type

1N5417 –

BYW172D

BYW172F

1N5418 –

BYW172G

Symbol

Value

200

Unit

Reverse voltage=

Repetitive peak reverse voltage

V =

300

RRM

400

Peak forward surge current

Average forward current

t =10ms, single half sine wave

100

FSM

FAV

Junction and storage

temperature range

Non repetitive reverse

avanlanche energy

T =T

–65...+175

stg

=1A

(BR)R

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

Value

Unit

K/W

l=10mm, T =constant

thJA

on PC board with spacing 25mm

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

I =3A

1.1

1.5

Forward voltage

Reverse current

I =9A

V =V

RRM

V =V

, T =100 C

RRM

Reverse recovery time I =0.5A, I =1A, i =0.25A

100

www.vishay.com

1 (4)

Document Number 86001

Rev. 4, 27-Sep-00

12 3 4

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