Datasheet > 1N5239B

1N5239B

更新时间： 2024-09-15 07:17:15

品牌	Logo	应用领域
威伦 - WILLAS		二极管测试
页数	文件大小	规格书
3页	380K
描述
Silicon Z–Diodes

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中文翻译

获取价格

数据手册

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1N5239B 数据手册

1N5267B

1N5221B THRU

WILLAS

Silicon Z–Diodes

Unit: inch (mm)

.022(0.55)

.018(0.45)

DO-35

Features

1.02(26.0)

MIN.

Plannar Die constuction

500mW Power Dissipation

Ideally Suited for Automated Assembly Processes

.153(3.6)

.132(3.0)

V –tolerance ± 5%

Applications

.087(2.2)

.067(1.7)

Voltage stabilization

1.02(26.0)

MIN.

MECHANICAL DATA

Approx. Weight:

0.136 grams

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

est Conditions

=25 C

amb

Type

Symbol

Value

500

Unit

TOT

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

l=9.5mm (3/8”), T =constant

Symbol

thJA

Value

300

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.1

2010.06

WILLS ELECTRONIC CORP.

12 3

中文翻译

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