1N5221B-
1N5267B
SILICON ZENER DIODES
VOLTAGE 2.4 To 75 Volts POWER 500 mWatts
FEATURES
DO-35
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Value
500
Units
mW
Power Dissipation at Tamb = 25 OC
P
TO T
Junction Temperature
175
OC
OC
T
J
Storage Temperature Range
-65 to +175
TS
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Parameter
Symbol
RQJA
Min.
--
Typ.
--
Max.
0.3*
Units
Thermal Resistance Junction to Ambient Air
K/mW
V
Forward Voltage at IF = 200mA
--
1.1
VF
--
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
2015-09
REV: O