Datasheet > 1N5186_08

1N5186_08

更新时间： 2024-11-23 12:50:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管快速恢复二极管
页数	文件大小	规格书
2页	106K
描述
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

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中文翻译

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1N5186_08 数据手册

1N5186 thru 1N5190

VOIDLESS-HERMETICALLY SEALED

FAST RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 3.0 Amp rated rectifiers for working peak reverse

voltages from 100 to 600 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix. Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speed requirements including fast

and ultrafast device types in both through-hole and surface mount packages.

Package E

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N5186 to 1N5190 series

Voidless hermetically sealed glass package

Triple-Layer Passivation

•

Fast recovery 3 Amp rectifiers 100 to 600 V

Military and other high-reliability applications

General rectifier applications including bridges,

half-bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 100 to 600 Volts.

•

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/424

Low thermal resistance

•

Controlled avalanche with peak reverse power

capability

•

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction & Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Thermal Resistance: 20^oC/W junction to lead at 3/8

inch (10 mm) lead length from body

Thermal Impedance: 1.5^oC/W @ 10 ms heating time

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over Copper

•

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

Average Rectified Forward Current (I_O): 3.0 Amps @ T_A

= 25ºC and 0.700 Amps at T_A= 150ºC

TAPE & REEL option: Standard per EIA-296

WEIGHT: 750 mg

•

Forward Surge Current: 80 Amps @ 8.3 ms half-sine

Solder Temperatures: 260ºC for 10 s (maximum)

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

WORKING PEAK

REVERSE

MINIMUM

BREAKDOWN

VOLTAGE

FORWARD

VOLTAGE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

REVERSE

RECOVERY

TIME

AVERAGE

RECTIFIED

CURRENT AMPS

VOLTAGE

@ 50μA

@ V

@ 9A (pulsed)

TYPE

RWM

25^oC

µA

RWM

MIN

MAX

100^oC

25^oC

AMPS

3.0

150^oC

AMPS

0.7

VOLTS

100V

200V

400V

500V

600V

VOLTS

150

200

250

300

400

µA

1N5186

1N5187

1N5188

1N5189

1N5190

120V

240V

480V

550V

660V

0.9V

1.5V

2.0

100

3.0

0.7

6-11-2008 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

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与1N5186_08相关器件

型号	品牌	获取价格	描述	数据表
1N5186BK	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,
1N5186E3	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT,
1N5186R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon,
1N5186US	MICROSEMI	获取价格	VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS
1N5186X	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,
1N5187	MICROSEMI	获取价格	RECTIFIERS MILITARY APPROVED, 3AMP, FAST RECOVERY
1N5187	SENSITRON	获取价格	FAST RECOVERY RECTIFIERS
1N5187	DIGITRON	获取价格	Rectifier, Fast Recovery; Max Peak Repetitive Reverse Voltage: 3; Max TMS Bridge Input Vol
1N5187BK	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
1N5187E3	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, ROHS COMPLIANT,

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