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1N5188PBFREE PDF预览

1N5188PBFREE

更新时间: 2024-11-23 13:02:19
品牌 Logo 应用领域
CENTRAL 整流二极管快速恢复二极管
页数 文件大小 规格书
2页 284K
描述
Rectifier Diode,

1N5188PBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-609代码:e3最大非重复峰值正向电流:80 A
元件数量:1最高工作温度:200 °C
最大输出电流:3 A峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:400 V最大反向恢复时间:0.25 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:MATTE TIN OVER NICKEL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5188PBFREE 数据手册

 浏览型号1N5188PBFREE的Datasheet PDF文件第2页 
1N5188  
1N5189  
1N5190  
www.centralsemi.com  
FAST RECOVERY, GLASS  
PASSIVATED SILICON RECTIFIER  
3 AMP, 400 THRU 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N5188 Series  
are silicon rectifiers mounted in a hermetically sealed,  
glass passivated package, designed for general  
purpose applications where fast reverse recovery times  
are required.  
MARKING: FULL PART NUMBER  
GPR-4AM CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL 1N5188 1N5189 1N5190  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
400  
400  
280  
500  
600  
600  
420  
V
RRM  
V
500  
V
V
R
RMS Reverse Voltage  
V
350  
R(RMS)  
Average Forward Current  
I
3.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
Operating and Storage Junction Temperature  
I
80  
A
FSM  
T , T  
-65 to +200  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V =Rated V  
2.0  
100  
1.5  
μA  
R
R
RRM  
I
V =Rated V  
, T =100°C  
μA  
V
R
R
RRM  
A
V
I =9.0A, tp=380ꢀs  
0.9  
480  
550  
660  
F
F
BV  
BV  
BV  
I =100μA (1N5188)  
V
R
R
R
R
I =100μA (1N5189)  
V
R
I =100μA (1N5190)  
V
R
t
t
t
I =0.5A, I =1.0A, I =0.25A (1N5188)  
250  
300  
400  
ns  
ns  
ns  
rr  
rr  
rr  
F
R
rr  
I =0.5A, I =1.0A, I =0.25A (1N5189)  
F
R
rr  
I =0.5A, I =1.0A, I =0.25A (1N5190)  
F
R
rr  
R0 (5-March 2012)  

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