Datasheet > 1N5062GP-HE3/73

1N5062GP-HE3/73

更新时间： 2023-01-03 06:31:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Signal Diode

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1N5062GP-HE3/73 数据手册

1N5059GP thru 1N5062GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

DO-204AC (DO-15)

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 800 V

50 A

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

5.0 μA

V_F

1.2 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP

UNIT

(1)

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

200

140

200

400

280

400

600

420

600

800

560

800

(1)

Maximum DC blocking voltage

V_DC

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 75 °C

(1)

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

T_A= 25 °C

T_A= 75 °C

5.0

Maximum full load reverse current, full cycle

average 0.375" (9.5 mm) lead length at

(1)

I_R(AV)

μA

°C

150

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Note

(1)

JEDEC registered values

Document Number: 88513

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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