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1N5062TR PDF预览

1N5062TR

更新时间: 2024-11-07 12:59:59
品牌 Logo 应用领域
威世 - VISHAY 二极管IOT
页数 文件大小 规格书
2页 55K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

1N5062TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.55其他特性:PATENTED DEVICE, METALLURGICALLY BONDED
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AP
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:4 µs表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5062TR 数据手册

 浏览型号1N5062TR的Datasheet PDF文件第2页 
1N5059 THRU 1N5062  
GLASS PASSIVATED JUNCTION RECTIFIER  
Reverse Voltage - 200 to 800 Volts  
Forward Current - 1. 0 Ampere  
FEATURES  
High temperature metallurgically bonded  
construction  
DO-204AP  
1.0 Ampere operation at T =75°C  
A
0.034 (0.86)  
0.028 (0.71)  
with no thermal runaway  
1.0 (25.4)  
DIA.  
MIN.  
Typical I less than 0.1µA  
R
Hermetically sealed package  
Glass passivated cavity-free junction  
Capable of meeting environmental standards of  
MIL-S-19500  
0.240 (6.1)  
MAX.  
High temperature soldering guaranteed:  
350°C/10 seconds 0.375” (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.150 (3.8)  
0.100 (2.5)  
DIA.  
1.0 (25.4)  
MIN.  
MECHANICAL DATA  
Case:JEDEC DO-204AP solid glass body  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
Polarity: Color band denotes cathode end  
Weight: 0.02 ounce, 0.56 gram  
*Brazed-lead assembly is covered by Patent No. 3,930,306  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRMS  
VDC  
1N5059  
200  
1N5060  
400  
1N5061  
600  
1N5062  
800  
UNITS  
Volts  
Volts  
Volts  
* Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
140  
280  
420  
560  
* Maximum DC blocking voltage  
200  
400  
600  
800  
* Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=75°C  
I(AV)  
1.0  
Amp  
* Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
50.0  
Amps  
Volts  
µA  
* Maximum instantaneous forward voltage at 1.0A  
* Maximum full Load reverse current, full cycle  
1.2  
5.0  
average 0.375” (9.5mm)  
lead length at  
TA=25°C  
TA=75°C  
IR(AV)  
150  
300  
100  
200  
* Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=175°C  
5.0  
IR  
µA  
Typical reverse recovery time (NOTE 1)  
Typical junction capacitance (NOTE 2)  
trr  
CJ  
1.5  
15.0  
55.0  
µs  
pF  
Typical thermal resistance (NOTE 3)  
RΘJA  
TJ, TSTG  
°C/W  
°C  
* Operating junction and storage temperature range  
-65 to +175  
NOTES:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, lrr=0.25A  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts  
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length P.C.B. mounted  
*JEDEC registered values  
4/98  

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