Datasheet > 1N4500_10

1N4500_10

更新时间： 2024-09-13 07:21:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
2页	43K
描述
SWITCHING DIODE

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数据手册

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1N4500_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

– METALLURGICALLY BONDED

– HERMETICALLY SEALED

SWITCHING DIODE

– DOUBLE PLUG CONSTRUCTION

Qualified per MIL-PRF-19500/403

DEVICES

QUALIFIED LEVELS

1N4500

JAN

JANTX

MAXIMUM RATING AT 25°C

Operating Temperature:

Storage Temperature:

Surge Current A, sine 1S:

Surge Current A, sine 1μS:

Leakage Current: 100nA

-65°C to +175°C

-65°C to +200°C

0.5A

75V, T_A= +25°C

DC ELECTRICAL CHARACTERISTICS

V_F

I_R

V_R

V_BR

I_R

Min

Ambient

(°C)

I_F

Min Max Ambient

Max Ambient

Min Max

(°C)

V(dc)

(°C)

μA

.250 0.47 0.56

100

0.52 0.60

0.64 0.72

0.67 0.77

DO-35

300

1.10

NOTE: (1) Derate 2.0mAdc/°C for TA > =25°C

AC ELECTRICAL CHARACTERISTICS AT 25°C

Min

Max

4.0

Unit

Capacitance @ 0V

I_F= I_R= 10mA

R_L= 100 ohms

6.0

LDS-0154 Rev. 1 (100198)

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与1N4500_10相关器件

型号	品牌	获取价格	描述	数据表
1N4500-1	MICROSEMI	获取价格	MILITARY SWITCHING DIODES
1N4502	NJSEMI	获取价格	GERMANIUM DIODE
1N4502BK	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.1A, 20V V(RRM), Germanium, DO-7
1N4502BKLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.1A, 20V V(RRM), Germanium, DO-7,
1N4502LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.1A, 20V V(RRM), Germanium, DO-7,
1N4502TR	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.1A, 20V V(RRM), Germanium, DO-7
1N4502TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.1A, 20V V(RRM), Germanium, DO-7,
1N4506	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N4506E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 22A, 200V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N4506R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 22A, 200V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI