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1N4254SM PDF预览

1N4254SM

更新时间: 2024-11-18 19:59:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 135K
描述
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2

1N4254SM 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.53
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:0.25 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4254SM 数据手册

 浏览型号1N4254SM的Datasheet PDF文件第2页浏览型号1N4254SM的Datasheet PDF文件第3页 
1N3643 thru 1N3647  
1N4254 thru 1n4257  
1N5181 thru 1N5184  
VOIDLESS-HERMETICALLY-SEALED  
HIGH VOLTAGE RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These “standard recovery” high voltage rectifier diode series are military qualified to  
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru  
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for  
high-reliability where a failure cannot be tolerated for high voltage applications.  
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages  
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction  
using an internal “Category I” metallurgical bond. Surface mount MELF package  
configurations are also available by adding “SM” suffix. Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
S Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
JEDEC registered 1N3643 thru 1N3647, 1N4254  
thru 1N4257, and 1N5181 thru 1N5187 series  
High voltage standard recovery rectifiers 1000 to  
10,000 V  
Voidless Hermetically Sealed Glass Package  
Triple Layer Passivation  
Military and other high-reliability applications  
Applications include bridges, half-bridges, catch  
diodes, voltage multipliers, X-ray machines,  
power supplies, transmitters, and radar  
equipment  
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
Internal “Category I” Metallurgical bonds  
Lowest Reverse Leakage Available  
Lowest Thermal Resistance Available  
Absolute High Voltage / High Temperature Stability  
1N5181 thru 1N5184 meet or exceed requirements  
of MIL-S-19500/389  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
1N3644 thru 1N3647 JAN, JANTX types available  
per MIL-S19500/279  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “SM” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction & Storage Temperature: -65oC to +175oC  
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
Average Rectified Forward Current (IO):  
1N3643 thru 1N3647: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 400 mg (approx)  
1N4254 thru 1N4257: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
See package dimensions on last page  
1N5181 thru 1N5184: 0.100 Amps @ TA = 55ºC  
0.060 Amps @ TA = 100ºC  
Forward Surge Current: See Electrical  
Characteristics for surge at 8.3 ms half-sine wave  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright © 2005  
5-13-2005 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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