5秒后页面跳转
捷配首页

Datasheet > 1N4257SM
1N4257SM PDF预览

1N4257SM

更新时间： 2024-11-18 19:59:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 135K
描述
Rectifier Diode, 1 Element, 0.25A, 3000V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2

阅读下载

中文翻译

获取价格

1N4257SM 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：MELF包装说明：O-LELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.79其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.5 VJESD-30 代码：O-LELF-R2
JESD-609代码：e0最大非重复峰值正向电流：10 A
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：0.25 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：3000 V子类别：Rectifier Diodes
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N4257SM 数据手册

 浏览型号1N4257SM的Datasheet PDF文件第2页浏览型号1N4257SM的Datasheet PDF文件第3页 
1N3643 thru 1N3647  
1N4254 thru 1n4257  
1N5181 thru 1N5184  
VOIDLESS-HERMETICALLY-SEALED  
HIGH VOLTAGE RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These “standard recovery” high voltage rectifier diode series are military qualified to  
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru  
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for  
high-reliability where a failure cannot be tolerated for high voltage applications.  
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages  
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction  
using an internal “Category I” metallurgical bond. Surface mount MELF package  
configurations are also available by adding “SM” suffix. Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
S Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
JEDEC registered 1N3643 thru 1N3647, 1N4254  
thru 1N4257, and 1N5181 thru 1N5187 series  
•
High voltage standard recovery rectifiers 1000 to  
10,000 V  
•
•
•
•
•
•
•
Voidless Hermetically Sealed Glass Package  
Triple Layer Passivation  
•
•
Military and other high-reliability applications  
Applications include bridges, half-bridges, catch  
diodes, voltage multipliers, X-ray machines,  
power supplies, transmitters, and radar  
equipment  
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
Internal “Category I” Metallurgical bonds  
Lowest Reverse Leakage Available  
Lowest Thermal Resistance Available  
Absolute High Voltage / High Temperature Stability  
•
•
•
1N5181 thru 1N5184 meet or exceed requirements  
of MIL-S-19500/389  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
•
1N3644 thru 1N3647 JAN, JANTX types available  
per MIL-S19500/279  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “SM” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
•
Average Rectified Forward Current (IO):  
1N3643 thru 1N3647: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 400 mg (approx)  
1N4254 thru 1N4257: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
See package dimensions on last page  
1N5181 thru 1N5184: 0.100 Amps @ TA = 55ºC  
0.060 Amps @ TA = 100ºC  
•
•
Forward Surge Current: See Electrical  
Characteristics for surge at 8.3 ms half-sine wave  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright © 2005  
5-13-2005 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与1N4257SM相关器件

型号 品牌 获取价格 描述 数据表
1N4278 JINANJINGHENG

获取价格

 		1W SILICON PLANAR ZENER DIODES
1N429 SMSC

获取价格

 		Zener Diode, 6.2V V(Z), Silicon
1N4291 NJSEMI

获取价格

 		DO-41
1N4292 NJSEMI

获取价格

 		DO-41
1N4293 NJSEMI

获取价格

 		DO-41
1N4294 ASI

获取价格

 		Mixer Diode, S Band, Silicon, DO-22, HERMETIC SEALED, DO-23, 1 PIN
1N4294AM ASI

获取价格

 		Diode,
1N4294M ASI

获取价格

 		Mixer Diode, S Band, Silicon, DO-22, HERMETIC SEALED, DO-22, 1 PIN
1N4294MR ASI

获取价格

 		Mixer Diode, S Band, Silicon, DO-22, HERMETIC SEALED, DO-22, 1 PIN
1N4294R ASI

获取价格

 		Mixer Diode, S Band, Silicon, DO-22, HERMETIC SEALED, DO-22, 1 PIN

与1N4257SM相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证