生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.74 | Is Samacsys: | N |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 元件数量: | 1 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 0.25 A | 最大重复峰值反向电压: | 2000 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N4255E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Blank, 1 Element, 0.25A, 2000V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC | |
1N4255SM | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
1N4256 | NJSEMI |
获取价格 |
Microminiature package. | |
1N4256 | MICROSEMI |
获取价格 |
HIGH VOLTAGE RECTIFIERS | |
1N4256E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Blank, 1 Element, 0.25A, 2500V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC | |
1N4256SM | MICROSEMI |
获取价格 |
暂无描述 | |
1N4256SME3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
1N4257 | MICROSEMI |
获取价格 |
HIGH VOLTAGE RECTIFIERS | |
1N4257 | NJSEMI |
获取价格 |
Microminiature package. | |
1N4257E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Blank, 1 Element, 0.25A, 3000V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC |