1N4148UBCA

更新时间： 2024-02-20 17:30:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
19页	104K
描述
PERFORMANCE SPECIFICATION

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技术参数
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1N4148UBCA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.76
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.715 V	最大非重复峰值正向电流：	2 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	0.15 A	最大重复峰值反向电压：	75 V
最大反向恢复时间：	0.004 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

1N4148UBCA 数据手册

MIL-PRF-19500/116L

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein.

4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table IV

of MIL-PRF-19500)

Measurement

JANTX and JANTXV levels

JAN level

Temperature cycling in accordance

with MIL-PRF-19500 TX level.

Temperature cycling

3c (1)

Thermal impedance (see 4.5.5)

Not applicable

Thermal impedance (see 4.5.5)

Not applicable

10 (2)

Not applicable

Method 1038, condition A, t = 48 hours

Not applicable

and V

R1 F1

Not applicable

See 4.3.1, t = 48 hours

(3) Subgroup 2 of table I herein;

= 100 percent of initial reading or 15 nA,

whichever is greater;

= 25 mV dc.

PDA = 10 percent

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) Test within 24 hours after removal from test.

(3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.

4.3.1 Burn-in test conditions. Burn-in conditions are as follows:

T_A+30 C 5 C

T_A= +30 C 5 C

Type

_RWM= 75 V (pk)

f = 50 - 60 Hz

1N914, 1N914UR

= 75 mA

= 125 mA

= 200 mA

I =150 mA min

1N4531, 1N4531UR

I = 175 mA min

1N4148-1, 1N4148UR-1, 1N4148UB,

1N4148UB2, 1N4148UBR2

I = 200 mA min

1...6 7 8910 11 12...19

中文翻译

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与1N4148UBCA相关器件

型号	品牌	获取价格	描述	数据表
1N4148UBCC	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
1N4148UBCCC	MICROSEMI	获取价格	Rectifier Diode, 2 Element, 0.2A, 75V V(RRM), Silicon, CERAMIC, UBC-3
1N4148UBCD	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
1N4148UR-1	MICROSEMI	获取价格	MINI-MELF-SMD Silicon Diode
1N4148UR-1	CDI-DIODE	获取价格	SWITCHING DIODE
1N4148UR-1_1	MICROSEMI	获取价格	SWITCHING DIODE
1N4148UR-1-TR	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
1N4148UR-1-TRE3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
1N4148VC	ROHM	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,
1N4148VE	ROHM	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,

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