Datasheet > 1N4148-LFR

1N4148-LFR

更新时间： 2024-11-14 11:45:27

品牌	Logo	应用领域
FRONTIER		二极管局域网
页数	文件大小	规格书
2页	125K
描述
SILICON EPITAXIAL PLANAR DIODE

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数据手册

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1N4148-LFR 数据手册

Frontier Electronics Corp.

667 E. COCHRAN STREET, SIMI VALLEY, CA 93065

TEL: (805) 522-9998 FAX: (805) 522-9989

E-mail: frontiersales@frontierusa.com

Web: http://www.frontierusa.com

SILICON EPITAXIAL PLANAR DIODE

1N4148-LFR

FEATURES

z FAST SWITCHING

z SMALL SIZE

z ROHS

0.52∅

1.9 ∅

3.9

MECHANICAL DATA

z CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS

z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208

z POLARITY: CATHODE INDICATED BY COLOR BAND

z WEIGHT: 0.13 GRAMS

27.5

MIN

RATINGS

SYMBOL

1N4148-LFR

UNITS

REVERSE VOLTAGE

V_R

PEAK REVERSE VOLTAGE

V_RM

100

RECTIFIED CURRENT (AVERAGE)

HALF WAVE RECTIFICATION WITH RESIST LOAD

AT T_amb=25 ºC AND f ≥ 50HZ (NOTE 1)

SURGE FORWARD CURRENT AT T<1 s AND T_J=25 ºC

POWER DISSIPATION AT T_amb=25 ºC

JUNCTION TEMPERATURE

I_O

150

I_FSM

P_TOT

T_J

500

ºC

200

STORAGE TEMPERATURE RANGE

T_S

- 55 TO + 200

ºC

ELECTRICAL CHARACTERISTICS (A_TT_A=25°C UNLESS OTHERWISE NOTED)

CHARACTERISTICS @ T_J＝25 ºC

FORWARD VOLTAGE AT I_F=10mA

SYMBOL

V_F

MIN

TYP

MAX

UNITS

LEAKAGE CURRENT

AT V_R=20V

AT V_R=75V

AT V_R=20V T_J=150 ºC

I_R

μA

REVERSE BREAKDOWN VOLTAGE

TESTED WITH 100μA PULSES

CAPACITANCE AT V_F=V_R=0

VOLTAGE RISE WHEN SWITCHING ON

TESTED WITH 50mA FORWARD PULSES

V_R

100

C_TOT

V_FR

2.5

TP=0.1μS RISE TIME＜30ns F_P=5 TO 100 KHZ

REVERSE RECOVERY TIME

FROM I_F=10mA TO I_R=1mA V_R=6V R_L=100Ω

THERMAL RESISTANCE

JUNCTION TO AMBIENT AIR (NOTE 1)

RECTIFICATION EFFICIENCY

AT f =100 MHZ V_RF=2V

T_RR

R_THA

N_V

0.35

K / mW

0.45

NOTE:

1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH

1N4148-LFR

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