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1N4148M-TP PDF预览

1N4148M-TP

更新时间: 2024-11-14 13:03:31
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 81K
描述
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, ROHS COMPLIANT PACKAGE-2

1N4148M-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-34
包装说明:ROHS COMPLIANT PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.56
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-34JESD-30 代码:O-XALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.15 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大反向恢复时间:0.004 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4148M-TP 数据手册

 浏览型号1N4148M-TP的Datasheet PDF文件第2页浏览型号1N4148M-TP的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
1N4148  
Features  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Cost  
500mW 100 Volt  
Silicon Epitaxial Diode  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 35°C/W Junction To Ambient  
DO-35  
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Peak Reverse  
Voltage  
Average Rectified  
Current  
VR  
VRM  
75V  
100V  
A
IO  
150mA Resistive Load  
Cathode  
Mark  
f > 50Hz  
Power Dissipation  
Junction  
Temperature  
Peak Forward Surge  
Current  
PTOT  
TJ  
500mW  
200°C  
B
D
IFSM  
VF  
IR  
500mA t<1s  
Maximum  
C
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
1.0V  
IFM = 10mA;  
TJ = 25°C*  
VR=20Volts  
TJ = 25°C  
TJ = 150°C  
VR=75Volts  
Measured at  
1.0MHz, VR=4.0V  
IF=10mA  
25nA  
50mA  
5uA  
DIMENSIONS  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
---  
---  
---  
25.40  
CJ  
Trr  
4pF  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
2.00  
.52  
---  
4nS  
VR = 6V  
1.000  
RL=100W  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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