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1N4148T PDF预览

1N4148T

更新时间: 2024-10-29 22:37:55
品牌 Logo 应用领域
TEMIC 二极管
页数 文件大小 规格书
4页 48K
描述
Silicon Epitaxial Planar Diodes

1N4148T 数据手册

 浏览型号1N4148T的Datasheet PDF文件第2页浏览型号1N4148T的Datasheet PDF文件第3页浏览型号1N4148T的Datasheet PDF文件第4页 
1N4148.1N4448  
Silicon Epitaxial Planar Diodes  
Features  
Electrically equivalent diodes:  
1N4148 – 1N914  
1N4448 – 1N914B  
Applications  
Extreme fast switches  
94 9367  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
100  
Unit  
V
Repetitive peak reverse voltage  
Reverse voltage  
V
RRM  
V
R
75  
V
Peak forward surge current  
Repetitive peak forward current  
Forward current  
t =1 s  
I
2
A
p
FSM  
FRM  
I
500  
mA  
mA  
mA  
mW  
mW  
C
I
300  
F
Average forward current  
Power dissipation  
V =0  
R
I
150  
FAV  
l=4mm, T =45 C  
P
V
440  
L
l=4mm, T 25 C  
P
V
500  
L
Junction temperature  
T
200  
j
Storage temperature range  
T
stg  
–65...+200  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
l=4mm, T =constant  
Symbol  
Value  
350  
Unit  
K/W  
Junction ambient  
R
thJA  
L
TELEFUNKEN Semiconductors  
1 (4)  
Rev. A1, 12-Dec-94  

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