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1N4148SMTX PDF预览

1N4148SMTX

更新时间: 2024-11-15 13:02:19
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 60K
描述
Rectifier Diode,

1N4148SMTX 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:HIGH EFFICIENCY应用:HYPER FAST RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:O-LELF-R2
最大非重复峰值正向电流:2 A元件数量:1
相数:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
参考标准:MIL-19500最大重复峰值反向电压:75 V
最大反向电流:0.5 µA最大反向恢复时间:0.005 µs
反向测试电压:75 V表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

1N4148SMTX 数据手册

 浏览型号1N4148SMTX的Datasheet PDF文件第2页 
PRELIMINARY  
1N4148SM  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
200 mAMP  
75 VOLTS  
5 nsec  
Designer's Data Sheet  
FEATURES:  
HYPER FAST  
RECTIFIER  
• Hyper Fast Recovery: 5 nsec maximum  
• Subminiature Surface Mount Package  
• Round Tab Mounting (Square Tabs Available)  
• Hermetically Sealed  
SURFACE MOUNT  
ROUND TAB  
"SM"  
• Planar Passivated Chip  
• For High Efficiency Applications  
• TX, TXV, and Space Level Screening Available  
SYMBOL  
VALUE  
75  
UNITS  
Volts  
Maximum Ratings  
Peak Repetitive Reverse and  
DC Blocking Voltage  
V
RRM  
V
RWM  
V
R
Average Rectified Forward Current  
Io  
200  
2
mAmps  
Amps  
(Resistive Load, 60Hz, Sine Wave, T = 25 oC  
A
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow  
I
FSM  
junction to reach equilibrium between pulses, T = 25oC)  
A
Operating and Storage Temperature  
T
& T  
-65 TO +200  
0.35  
oC  
OP  
STG  
Maximum Thermal Resistance  
Junction to End Tab  
R
2JE  
oC/mW  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0061A  

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